Optical investigations of GaN deposited nano films using pulsed laser ablation in ethanol

Abstract

We provide an optical study on GaN thin film testing created by pulsed laser (ablation) in liquid. This study applied six different energies for ablated GaN nanoparticles in the liquid. According to the XRD test, the diffraction peak (0002) has a narrow FWHM magnitude of 0.12, and the high order GaN diffraction peak has a low FWHM magnitude of 0.12 (0004). The optical range information was used to determine the band gap of samples with discernible crystallinity. Longtails were watched underneath the optical band gaps. Samples are entirely dependent on the laser ablation preparation's energies. The samples with the greatest laser power, 2000 mJ, decreased near band edge emission, peaking at 3.32 eV at room temperature. The largest energy band gap of 3.62 eV was reported at 1400 mJ. From the obtained results, it is clear that the possibility of using the prepared thin nano films in optoelectronics applications such as optical detectors, solar cells, and optical sensors