Please use this identifier to cite or link to this item:
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75205
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cimbri, Davide | - |
dc.contributor.author | Weimann, Nils | - |
dc.contributor.author | Qusay Raghib Ali Al-Taai | - |
dc.contributor.author | Afesomeh, Ofiare | - |
dc.contributor.author | Wasige, Edward | - |
dc.date.accessioned | 2022-05-11T03:42:27Z | - |
dc.date.available | 2022-05-11T03:42:27Z | - |
dc.date.issued | 2021-12 | - |
dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol.14 (Special Issue), 2021, pages 11-19 | en_US |
dc.identifier.issn | 1985-5761 (Printed) | - |
dc.identifier.issn | 1997-4434 (Online) | - |
dc.identifier.uri | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/75205 | - |
dc.description | Link to publisher's homepage at http://ijneam.unimap.edu.my | en_US |
dc.description.abstract | In this paper, we report on a simple test structure which can be used to accurately extract the specific contact resistivity ρc associated with metal-n++ InGaAs-based low-resistance Ohmic contacts through the transfer length method (TLM). The structure was designed to avoid common measurement artifacts that typically affect standard layouts. Moreover, microfabrication was optimised to achieve an accurate short minimum gap spacing of 1 μm through a dual-exposure step based on e-beam lithography, which is required for a reliable ρc estimation. Ohmic contacts based on a Ti/Pd/Au metal stack were fabricated and characterised using the proposed structure, resulting in an extracted ρc ≃ 1.37×10−7 Ω cm2 = 13.7 Ω μm2. This work will assist in increasing the quality of Ohmic contacts in high-power InGaAs/AlAs double-barrier resonant tunnelling diodes (RTDs), and so help to overcome one of the bottlenecks to the output power capability of RTD-based oscillators at terahertz frequencies. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Universiti Malaysia Perlis (UniMAP) | en_US |
dc.subject.other | Specific contact resistivity | en_US |
dc.subject.other | Transfer length method | en_US |
dc.subject.other | E-beam lithography | en_US |
dc.subject.other | Ohmic contact | en_US |
dc.subject.other | Resonant tunnelling diode | en_US |
dc.subject.other | Terahertz oscillator | en_US |
dc.title | Ohmic contacts optimisation for High-Power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure e-beam lithography approach | en_US |
dc.type | Article | en_US |
dc.identifier.url | http://ijneam.unimap.edu.my | - |
dc.contributor.url | davide.cimbri@glasgow.ac.uk | en_US |
Appears in Collections: | International Journal of Nanoelectronics and Materials (IJNeaM) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Ohmic Contacts Optimisation for High-Power.pdf | Main article | 2.98 MB | Adobe PDF | View/Open |
Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.