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dc.contributor.authorY. Al, Douri-
dc.date.accessioned2010-01-01T07:50:08Z-
dc.date.available2010-01-01T07:50:08Z-
dc.date.issued2007-
dc.identifier.citationJournal of Engineering Research and Education, vol. 4, 2007, pages 81-85.en_US
dc.identifier.issn1823-2981-
dc.identifier.urihttp://jere.unimap.edu.my-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/7453-
dc.descriptionLink to publisher's homepage at http://jere.unimap.edu.myen_US
dc.description.abstractUsing the polarity with respect to energy gap Egrx, an empirical formula of tonicity factor is obtained for a specific class of semiconductors. The computation of tonicity character is distinguished with high degree of accuracy reaches that of other calculations like ab initio methods. Systematic behaviours are noticed in the calculated values of tonicities. It is seen that the experimental and calculated discrepancies for lll-V compounds are three times as for ll-VI ones. The results are in good agreement with that of Phillips and other authors.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectSemiconductorsen_US
dc.subjectPolarityen_US
dc.subjectEnergy gap Egrxen_US
dc.subjectSemiconductor engineeringen_US
dc.subjectTonicitiesen_US
dc.titleCorrelation between the tonicity and the polarity in semiconductorsen_US
dc.typeArticleen_US
Appears in Collections:Journal of Engineering Research and Education (JERE)

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