Rapid response room temperature oxygen sensor based on Trivalent-Elements doped TiO2 thin film

Abstract

Trivalent metal-doped TiO2 thin films have been extensively investigated in gas sensor applications. The trivalent metal dopants are Al, Y and Gd. The trilayer fabrication of a gas sensor consists of a thin film, sputtered TiO2 and Au nanoparticles. The characteristics of the gas sensing properties are strongly correlated with the annealing temperature, film thickness, type of doping and deposition method. The subsequent properties are presented – the crystalline structure, grain size, roughness, strain, stress and defects. Thin films have been developed with concentrations of O2 gas up to 10 sccm. A response time for O2 gas in milliseconds was obtained at room temperature. Al doped TiO2 thin film have a faster response time operating at room temperature compared with other thin films. Oxygen vacancy defects also contribute to the speed of the response time for a gas sensor.