Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/72946
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dc.contributor.authorUsha Kumary, K. L.-
dc.contributor.authorPratheek, M.-
dc.contributor.authorAshfak, A.-
dc.contributor.authorShahul Hameed, T. A.-
dc.contributor.authorPredeep, P.-
dc.date.accessioned2021-12-20T04:32:08Z-
dc.date.available2021-12-20T04:32:08Z-
dc.date.issued2021-07-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.14(3), 2021, pages 219-228en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/72946-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractPolymer-fullerene derivative bulk heterojunction (BHJ) organic photovoltaic cell (OPV) is one of the encouraging devices to harvest solar energy where transport layers carry the momentous role in performance and stability. In this work, the effect of C60 as an electron transport layer in a BHJ device composed of Poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-Phenyl-C61-butyric acid methyl ester (PCBM) is investigated by impedance spectroscopy (IS) and modelled using circuit models – the transmission circuit (TC) model and electrochemical polarization model. The effective lifetime and mobility of carriers were also extracted. It is seen that the fullerene C60 transport layer effectively reduces bulk resistance with biasing voltage.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subject.otherCarrier transporten_US
dc.subject.otherImpedance and mobilityen_US
dc.subject.otherPolymer-fullerene derivative bulk heterojunction (BHJ)en_US
dc.subject.otherOrganic photovoltaic cell (OPV)en_US
dc.titleEffect of transport layer on polymer - Fullerene derivative bulk heterojunction organic photovoltaic cell performance using transmission circuit model analysisen_US
dc.typeArticleen_US
dc.contributor.urlushakumarykl@gmail.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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