Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/71491
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dc.contributor.authorS.R., Esa-
dc.contributor.authorG., Omar-
dc.contributor.authorS.H. Sheikh, Md Fadzullah-
dc.contributor.authorK.S Siow-
dc.contributor.authorB., Abdul Rahim-
dc.date.accessioned2021-07-19T02:03:26Z-
dc.date.available2021-07-19T02:03:26Z-
dc.date.issued2021-04-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.14(2), 2021, pages 179-194en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/71491-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractSintered silver (Ag) is one of the most promising interconnect materials for high temperature electronics applications due to its potential to withstand harsh and extreme environments. This paper investigates the microstructure evolutions of Ag particles under pressureless sintering in a polymeric adhesive binder at 200 °C, 250 °C, 275 °C, and 300 °C for a duration of 2 hours. The grains, particles, and neck growth observed via two-dimensional Focused Ion Beam (FIB) cuts on the samples at different sintering temperatures were associated with the atomic motions and reduction of surface energy that is the driving force for sintering. In this study, the pressureless sintering process in a polymeric adhesive binder successfully transformed the scattered Ag particles into a compact and dense Ag joining at 300 °C. The electrical conductivity value obtained at 300 °C was 5.2E+05 S/cm, which was the highest among the evaluation samples.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectGrain sizeen_US
dc.subjectMicrostructureen_US
dc.subjectNeck growthen_US
dc.subjectPorosityen_US
dc.subjectSintered Agen_US
dc.titleThe evolutions of microstructure in pressureless Sintered Silver die attach materialen_US
dc.typeArticleen_US
dc.contributor.urlghazali@utem.edu.myen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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