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dc.contributor.authorOsman, R. A.-
dc.contributor.authorEsa, S. R.-
dc.contributor.authorPrabakaran, Poopalan-
dc.date.accessioned2009-08-02T01:49:16Z-
dc.date.available2009-08-02T01:49:16Z-
dc.date.issued2006-
dc.identifier.citationp.321-327en_US
dc.identifier.issn1089-8190-
dc.identifier.urihttp://ieeexplore.ieee.org/xpls/abs_all.jsp?=&arnumber=4456474-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/6656-
dc.descriptionLink to publisher's homepage at http://ieeexplore.ieee.orgen_US
dc.description.abstractMicrofluidic devices, based on silicon, are fabricated by photolithography, wet chemical etching with focus on an liquid conduction channel n-channel depletion MOSFET and a silica-liquid dielectric capacitor. Masks for both devices were designed with AutoCAD and printed on transparencies. Fabrication on p-〈100〉 4" Si wafers were executed and the devices were marginally characterized due to complications. The gate channel for the Liquid FET (LFET) were set to four sizes, which are 250,um, 500im, 750μm and 1000μm. The Liquid Capacitor (LCap) size was limited to only two, for lack of space on the wafer. A variety of processes were used to fabricate these devices. Tests show feasibility of the idea but proves process and process parameter control is extremely important and critical.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.ispartofseriesProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium, 2006en_US
dc.subjectMicrofluidicsen_US
dc.subjectCapacitorsen_US
dc.subjectMicrofluidic capacitoren_US
dc.subjectMetal oxide semiconductorsen_US
dc.subjectLiquid Capacitor (LCap)en_US
dc.titleDesign and fabrication of Microfluidic devices: MOSFET & Capacitoren_US
dc.typeArticleen_US
Appears in Collections:School of Microelectronic Engineering (Articles)

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