Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/62441
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dc.contributor.authorAkeem Adekunle Adewale-
dc.contributor.authorAbdullah, Chik-
dc.contributor.authorRuhiyuddin, Mohd Zaki-
dc.contributor.authorFaizul, Che Pa-
dc.contributor.authorYeoh, Cheow Keat-
dc.contributor.authorNoorina Hidayu, Jamil-
dc.date.accessioned2019-10-16T06:59:19Z-
dc.date.available2019-10-16T06:59:19Z-
dc.date.issued2019-10-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.12(4), 2019, pages 477-484en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/62441-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractThis paper deals with enhancement of thermoelectric performance of SrTiO3 - a perovskite-based material by doping Ti-site with Ta. The electronic and the thermoelectric transport properties of doped SrTiO3 were studied using the first principle calculation in full-potential of density functional theory. Spin-orbit coupling including Hubbard U parameter influences were observed in the investigation. Energy band structure and electron density of state were determined for electronic properties. The Seebeck coefficients, thermal conductivity, electrical conductivity as well as thermoelectric efficiency ZT were calculated for thermoelectric properties. The results of our calculations revealed that narrowing the bandgap of the material leads to the increase of thermoelectric efficiency ZT. At spin-orbit coupling with DFT+U method, ZT of 0.18 at 750 K were obtained and this is similar to the experimental data reported.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectSrTiO3en_US
dc.subjectDopeden_US
dc.subjectDFTen_US
dc.subjectDFT+Uen_US
dc.subjectSpin-Orbit couplingen_US
dc.subjectThermoelectricen_US
dc.titleDFT study of thermoelectric performance of SrTiO3 doped by tantalumen_US
dc.typeArticleen_US
dc.contributor.urladewaleakeem12@gmail.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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