Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/59931
Title: The effect of SrO doping on LaFeO3 using Yarosite extraction based Ethanol gas sensors performance fabricated by coprecipitation method
Authors: Endi, Suhendi
Muhamad Taufik, Ulhakim
Andhy, Setiawan
Dani Gustaman, Syarif
endis@upi.edu
Keywords: LaFeO3
Yarosite
Ethanol gas sensor
SrO doping
A coprecipitation method
Issue Date: Apr-2019
Publisher: Universiti Malaysia Perlis (UniMAP)
Citation: International Journal of Nanoelectronics and Materials, vol.12(2), 2019, pages 185-192
Abstract: Nowadays, semiconductor is one of the most important materials in the application of science and technology, especially gas sensor. In this present work, characterization of undoped and doped 10 mol% SrO on LaFeO3 based ethanol gas sensors has been conducted using LaCl3.7H2O, Fe2O3 from yarosite extraction, and SrCl2.6H2O. The used materials were prepared through coprecipitation method. The ethanol gas sensors were made in the form of the thick film using screen printing techniques and fired at 600°C for 2 hours. Characterization of crystal and morphology structures was carried out using X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM), respectively. Electrical properties of ethanol gas sensors were examined using a gas chamber. The XRD analysis indicated that thick films had a cubic crystal structure. The SEM analysis showed that doped 10 mol% SrO decreased the grain size of LaFeO3 from 31.29 nm to 29.56 nm. The analysis of electrical properties showed that the thick film doped by 10 mol% SrO has a higher response compared to undoped SrO. The operating temperature of thick films doped by 10 mol% SrO is 295°C-300°C, this value is lower than the undoped SrO operating temperature, it’s 345oC – 355oC. Electrical properties indicated that thick film doped by 10 mol% SrO is the best sensor. These results show that yarosite extraction can be used as the main material in gas sensor fabrication.
Description: Link to publisher's homepage at http://ijneam.unimap.edu.my
URI: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/59931
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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