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dc.contributor.authorShiva, L. U-
dc.contributor.authorAyachit, N. H.-
dc.contributor.authorUdachan, L. A-
dc.date.accessioned2019-05-10T06:49:18Z-
dc.date.available2019-05-10T06:49:18Z-
dc.date.issued2019-04-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.12(2), 2019, pages 221-236en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/59855-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractThe growth, structure and electrical properties of evaporated thin silver (Ag) films have been extensively investigated over the years because it has the highest electrical conductivity among all metals. The Ag thin films have been studied by thermal evaporation on glass, mica and Teflon. The thickness of Ag films in this investigation is in the range of 10-150 nm. The electrical properties include measurement of resistivity, the temperature coefficient of resistance (TCR), and activation energy (Ea) as a function of film thickness (t) have been studied. The experimental results are analyzed in the light of Fuchs-Sondheimer (FS) and Mayadas-Shatzkes (MS) theories. The resistivity of infinitely thick Ag film and TCR are found to be 3.53 × 10-8 Ω-m and 3.73 × 10-3/°C, respectively. The mean free path of conduction electron calculated from the resistivity and TCR data are 42.8 nm and 26.28 nm, respectively. A study on the initial stages of growth of Ag films and its microstructural properties has been conducted using a Scanning Electron Microscope (SEM) for films grown on different substrates and thickness.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectThin silver filmsen_US
dc.subjectElectrical resistivityen_US
dc.subjectThe electron mean free pathen_US
dc.subjectTCRen_US
dc.subjectMicrostructural propertiesen_US
dc.titleElectrical and microstructural properties of silver thin filmsen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my-
dc.contributor.urlshivaudachan8@gmail.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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