Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/58783
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dc.contributor.authorKamal, Kayed-
dc.date.accessioned2019-03-06T09:54:07Z-
dc.date.available2019-03-06T09:54:07Z-
dc.date.issued2019-01-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.12(1), 2019, pages 19-24en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/58783-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractThe structure of amorphous CNX thin films have a variety of chemical bond, and studies on these bonds ratios is very important because these ratios determine the appropriate technical use of these films. Therefore, this paper aim to investigate the relation between the conditions of preparation (deposition pressure) of a-CNx thin films prepared using PLD (Pulsed Laser Deposition) method and the film's structure. Results shown that the deposition pressure variation does not affecting the concentration in the same manner for all bonds in the film. Moreover, the sp2 cluster size and the order degree are related to the numerical value of the deposition pressure.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectXPS Spectroscopyen_US
dc.subjectCarbon Nitrideen_US
dc.subjectRaman Spectroscopyen_US
dc.subjectLaseren_US
dc.subjectDepositionen_US
dc.titleThe Influence of Nitrogen Pressure on the Structure of a-CNx Thin Films Prepared by PLD Methoden_US
dc.typeArticleen_US
dc.contributor.urlkhmk2000@gmail.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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