Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/57603
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dc.contributor.authorBasma, Chiyah-
dc.contributor.authorKamal, Kayed-
dc.date.accessioned2018-12-08T08:27:33Z-
dc.date.available2018-12-08T08:27:33Z-
dc.date.issued2018-07-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.11(3), 2018, pages 305-310en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/57603-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractIn this study, silver oxide thin films were deposited on silicon and glass substrates using thermal evaporation techniques without oxygen atmosphere with subsequent annealing in air. The deposited films were annealed in air at 100 and 450 C○ respectively. Optical properties show very low transparency at lower oxidation temperature. The transparency increased to an average value of55 % when applying annealing temperature of 450 C○. The optical band gap of Ag2O thin films increases from 0.92 eV to 1.73 eV as the annealing temperature increases from 100°C to 450°C.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectSilver Oxideen_US
dc.subjectThin Filmen_US
dc.subjectThermal Evaporationen_US
dc.subjectAnnealingen_US
dc.titleEffect of Annealing Temperature on the Structural and Optical Properties of Silver Oxide Thin Films Prepared by Thermal Evaporation with Subsequent Annealingen_US
dc.typeArticleen_US
dc.identifier.urlhttp://ijneam.unimap.edu.my-
dc.contributor.urlkhmk2000@gmail.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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