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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/57585
Title: | An Analytical Analysis of Quantum Capacitance in Nano-Scale Single-Wall Carbon Nano Tube Field Effect Transistor (CNTFET) |
Authors: | Ajay Kumar, Singh ajay.singh@mmu.edu.my |
Keywords: | Carbon Nano Tube Density of States Gate Capacitance Quantum Capacitance Total Charge Density |
Issue Date: | Jul-2018 |
Publisher: | Universiti Malaysia Perlis (UniMAP) |
Citation: | International Journal of Nanoelectronics and Materials, vol.11 (3), 2018, pages 249-262 |
Abstract: | This paper discusses the quantum capacitance effect in single-wall conventional CNTFET devices. The analytical expression for quantum capacitance has been derived based on the normalized number of carriers/total charge density. The total charge density in the inverted channel is suppressed at large drain voltage but remains unaffected by introducing any new sub-band. Lowering the quantum capacitance in the CNTFET device is a major challenge to improve the performance of the device. Quantum capacitance takes lower value at higher sub-band when operated at low gate bias voltage. Lower quantum capacitance can be achieved for larger tube’s diameter due to reduced band gap and by controlling the BTBT (band-to-band tunneling) leakage current which is possible by choosing the proper dielectric material and gate oxide thickness. |
Description: | Link to publisher's homepage at http://ijneam.unimap.edu.my |
URI: | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/57585 |
ISSN: | 1985-5761 (Printed) 1997-4434 (Online) |
Appears in Collections: | International Journal of Nanoelectronics and Materials (IJNeaM) |
Files in This Item:
File | Description | Size | Format | |
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An Analytical Analysis of Quantum Capacitance in Nano-Scale SingleWall.pdf | 1.53 MB | Adobe PDF | View/Open |
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