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dc.contributor.authorAbood, M. K.-
dc.contributor.authorSalim, E. T.-
dc.contributor.authorSaimon, J. A.-
dc.date.accessioned2018-06-08T03:48:40Z-
dc.date.available2018-06-08T03:48:40Z-
dc.date.issued2018-04-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.11 (2), 2018, pages 127-134en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/53608-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractIn this study, thin‐film microstructures of polymorphous niobium pentoxide were successfully prepared at a low temperature. Spin coating was employed to deposit the colloidal suspension before and after ultrasonic vibration. The deposited films were characterised and analysed by X‐ray diffraction, scanning electron microscopy, and spectrophotometry for optical investigation. Results show that the films prepared before ultrasonic vibration possess a smooth and uniform surface. By contrast, films that underwent further ultrasonic vibration exhibit an earth rock‐like structure and a highly oriented, void‐ and crack‐free surface. Both film structures indicate the formation of a monoclinic structure. Low energy gap values of approximately 2.5 eV and 2.25 eV are suitable for heterojunction optoelectronic applications; this condition was proven by the typical I‐V behaviours of the prepared heterojunction on the silicon substrate.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectNb2O5en_US
dc.subjectThin Filmsen_US
dc.subjectScanning Electron Microscopy (SEM)en_US
dc.subjectSol–Gel Methoden_US
dc.subjectNiobic Aciden_US
dc.subjectColloidal Solutionen_US
dc.titleNiobium Pentoxide Thin Film Prepared using Simple Colloidal Suspension for Optoelectronic Applicationen_US
dc.typeArticleen_US
dc.contributor.urlevan_tarq@yahoo.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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