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dc.contributor.authorPandey, Bramha P.-
dc.date.accessioned2018-06-08T03:24:17Z-
dc.date.available2018-06-08T03:24:17Z-
dc.date.issued2018-04-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.11 (2), 2018, pages 143-152en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/53597-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.myen_US
dc.description.abstractThe electronic and optical properties of N atom‐width (N: 4, 8, 12, 16) armchair GaAs nanoribbons (NA GaAs NRs) have been studied with hydrogen (H) passivated nanoribbons using the DFT approach. The H passivated edge of NA GaAs NRs with different widths of nanoribbons provide great flexibility to modulate the fundamental band gap. All investigated width of 4, 8, 12, and 16 atom GaAs NRs are found to be semiconducting with direct band gaps of 3.071, 2.275, 2.155, and 2.02 eV respectively at k‐point Z (0, 0, 0.5), which exhibit interesting width dependent (N: 4~12) behaviour of the band gap. The complex dielectric constant was calculated using the Kubo‐Greenwood formula, from which the refractive index(n(ω)) and absorption coefficient (􀟙􁈺􀟱􁈻) were also calculated for the bulk as well as for all width of GaAs armchair nanoribbons. The nzz and 􀟙􀯭􀯭 components significantly play a major role in tuning the refractive index and optical absorption coefficient of the GaAs nanoribbons.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectNanoribbon(NR)en_US
dc.subjectArmchairen_US
dc.subjectDFTen_US
dc.subjectMGGAen_US
dc.subjectAbsorption Coefficienten_US
dc.subjectRefractive Indexen_US
dc.subjectBandgapen_US
dc.titleElectronic and Optical Properties of GaAs Armchair Nanoribbons: DFT Approachen_US
dc.typeArticleen_US
dc.contributor.urlpandey.bramha@gmail.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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