Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/51488
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dc.contributor.authorHadjaj, F.-
dc.contributor.authorBelghachi, A.-
dc.contributor.authorHelmaoui, A.-
dc.date.accessioned2018-02-07T04:12:55Z-
dc.date.available2018-02-07T04:12:55Z-
dc.date.issued2018-01-
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.11 (1), 2018, pages 61-70en_US
dc.identifier.issn1985-5761 (Printed)-
dc.identifier.issn1997-4434 (Online)-
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/51488-
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractIn this paper we investigate the optical gain seen by the polarization modes for each of Transverse Electric (TE) and Transverse Magnetic(TM) of GaAs/Al0.32Ga0.68As quantumwell lasers. The factor confinement and modal gain of proposed structure also have been simulated. Comparison between the two structures (single and multiple quantum) were conducted in the effort to evaluate and understand their behavior. Results show that the optical gain offers a better value in TE mode than in TM mode. As a result of being on higher standard and having a better performance in both cases thus this study conclude that the multiple quantum well structures are a better designed choice compared to single quantum well structure.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectConfinement factoren_US
dc.subjectOptical gainen_US
dc.subjectPolarizationen_US
dc.subjectQuantum well laseren_US
dc.titleOptical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasersen_US
dc.typeArticleen_US
dc.contributor.urlfatima_hadjaj_1979@yahoo.fr.en_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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