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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/49939
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dc.contributor.authorAl-ithawi, Sabah
dc.date.accessioned2017-10-12T03:58:09Z
dc.date.available2017-10-12T03:58:09Z
dc.date.issued2017
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.10 (2), 2017, pages 195-204en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/49939
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractAn optical modulator was fabricated with semiconductor ZnO by associating a nematic liquid crystal layer with indium–tin oxide. This device revealed the height variation in the phase and refractive index of irradiation ultraviolet laser light (λ = 375 nm) as well as in the voltage applied. This new optical modulator operated efficiently in the infrared range up to 4 μm.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlis (UniMAP)en_US
dc.subjectElectro-optical Modulatoren_US
dc.subjectIndium Tin Oxide (ITO)en_US
dc.subjectZnO n-type semiconductoren_US
dc.subjectMetal-insulator-semiconductor (MIS) structureen_US
dc.subjectLiquid crystals (LCs),en_US
dc.titleOptical modulator with ZnO bulk single crystalsen_US
dc.typeArticleen_US
dc.contributor.urlsa_laser@yahoo.comen_US
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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