Numerical analysis of the effect graded Zn (O,S) on the performance of the graded CIGS based solar cells by SCAPS-1D

Abstract

We used a one-dimensional simulation program solar cell Capacitance Simulator in 1 Dimension (SCAPS-1D) to investigate Copper-Indium-Gallium-Diselenide- (CIGS-) based solar cells properties. CIGS Solar cells, constituted by a pile of thin layers, contain in a particular fine layer called buffer layer cadmium sulfide (CdS) between the absorber (CIGS) and before the contact oxysulfure of zinc (Zn(O,S). The study will focus on the simulation of the characteristics of a photovoltaic module (the open circuit voltage, the short circuit current, the form factor and performance of the cell). The results obtained after optimization of the thickness and doping of the holders of the absorbent layer and the window layer are Voc = 0.92 V, Icc = 38.33 mA/cm², FF = 77.23% and the energy conversion efficiency is 27.51%.