Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/4615
Title: A development of MOSFET and IGBT thermal management in DC to DC converter
Authors: Norainon Mohamed
Professor Robert Teasdale Kennedy (Advisor)
Keywords: Electronic apparatus and appliances -- Temperature control
Field-effect transistors
Electric current converters
Converters
Power loss
Heat -- Transmission
Issue Date: May-2007
Publisher: School of Electrical Systems Engineering
Abstract: This project was to produce a template of MOSFET and IGBT thermal management in DC to DC converter. Thermal management included by supplying variable input voltages to the DC to DC converter, and gets the variables of operating junction temperature, thermal resistance, and safety margin of operating junction temperature and power dissipation. According to the DC to DC converter circuit, the equations of the power dissipation is from the MOSFET and IGBT, then from the equations, the operating junction temperature, thermal resistance, and safety margin of operating junction temperature has calculated with respect to the variable input voltages. The technique that has been used is by varying the duty cycle of the MOSFET and IGBT. MathCAD 13 was used as the method of solution. This report highlights on how to get the variable thermal parameters by varying the input voltages.
Description: Access is limited to UniMAP community.
URI: http://dspace.unimap.edu.my/123456789/4615
Appears in Collections:School of Electrical Systems Engineering (FYP)

Files in This Item:
File Description SizeFormat 
References and appendix.pdf738.25 kBAdobe PDFView/Open
Conclusion.pdf738.15 kBAdobe PDFView/Open
Results and discussion.pdf734.62 kBAdobe PDFView/Open
Methodology.pdf735.1 kBAdobe PDFView/Open
Literature review.pdf737.3 kBAdobe PDFView/Open
Introduction.pdf738.15 kBAdobe PDFView/Open
Abstract, Acknowledgement.pdf736.5 kBAdobe PDFView/Open


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