Application of the Taguchi's design of experiment in optimization of metal assisted chemical etching process

Abstract

Design of experiment (DOE) using statistical methodology to analyze data, predict process and product parameters. In the Design of Experiment, Taguchi method is one of the method available for optimization process. It also widely used in various field of study and Industry. Taguchi modelling can help to optimize design parameter and to minimize the number of experiment run. This study using Taguchi application in metal assisted chemical etching process which can determined the effect of various etchant concentration and etching time on silicon etching. The parameter and level is selected and visualized in Taguchi modelling. Then the experimental metal assisted chemical etching (MACE) is. Conducted using various etchant concentration and etching time at room temperature Design response is then characterized using Field emission scanning electron microscopy (FESEM).The data taken from design characterization which is etching rate, separation, size and uniformity of Si nanowires formation is analyze and evaluated using ANOVA and graph modelling in order to visualize the interaction of model. The ANOVA result shown that etching rate, size and separation of Si nanowires p-values is less than 0.05 implies that the model is significant. The optimized result shows in order to maximize the etching rate, length, separation and size the concentration AgNO3 and HF is set to be maximum that is 0.05 M and 10 M respectively and the optimum time duration for etching process to have maximum rate of etching, length, size and separation of nanowires is 100 minutes.