Please use this identifier to cite or link to this item:
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41819
Title: | Design and development of extended power amplifier specifically for X-band applications |
Authors: | Muhammad Nazif, Mohd Borhan Dr. Norsuhaida Ahmad |
Keywords: | Power amplifier Power amplifier -- Design and construction RF amplifier MESFET Transistor |
Issue Date: | Jul-2015 |
Publisher: | Universiti Malaysia Perlis (UniMAP) |
Abstract: | This paper concern with the design and simulation of RF amplifier using MESFET [TIM 8596_4UL] at 8.1 GHz to 10 GHz within x-band frequency range. RF amplifier designs rely on the terminal characteristics of the transistor as represented by Sparameter. S-parameter of transistor provides the necessary values to perform the analysis such as stability, DC-biasing and available gain. Based on the S-parameter of the transistor and certain performance requirements a systematic approach for the designing of RF power amplifier is developed using ADS [Advanced Design System]. RF amplifier circuit designed and simulated in ADS which has better stability but low magnitude of S21. By optimizing the DC-biasing circuit and using proper values of passive components, dielectric constant were achieved better performance. |
Description: | Access is limited to UniMAP community. |
URI: | http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41819 |
Appears in Collections: | School of Computer and Communication Engineering (FYP) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Abstract,Acknowledgement.pdf | 214.29 kB | Adobe PDF | View/Open | |
Introduction.pdf | 220.28 kB | Adobe PDF | View/Open | |
Literature Review.pdf | 503.95 kB | Adobe PDF | View/Open | |
Methodology.pdf | 320.6 kB | Adobe PDF | View/Open | |
Results and Discussion.pdf | 467.53 kB | Adobe PDF | View/Open | |
Conclusion and Recommendation.pdf | 177.98 kB | Adobe PDF | View/Open | |
Refference and Appendics.pdf | 251.81 kB | Adobe PDF | View/Open |
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