Design power amplifier class AB at ISM band

Abstract

In this thesis, a class AB power amplifier at industrial, scientific and medical application (ISM) band has been design and simulated. This power amplifier is used for a telecommunication system. Class AB amplifier is widely used in wireless communication due to compromise between linearity and efficiency. A transistor that has been chosen in this work is Pseudomorphic High Electron Mobility Transistor (PHEMT), ATF36077 form Avago Technology. The simulation was carried out to analyze the behavior of power amplifier in the 2.4 GHz ISM band. The biasing circuit, input and output matching networks have been designed and simulated using Advanced Design System (ADS) Simulator. The PCB of the proposed power amplifier circuit is using a Rogers RT/Duroid 5880. The simulated result for class AB power amplifier only produced output power of 34.356 dBm and the power added efficiency (PAE) of 56.757 %.