High accuracy linear and nonlinear models for pHEMT devices

Abstract

• An accurate linear and nonlinear models of a transistor or also known as transistor model is an essential requirement for any circuit design. Therefore, there is a continuous effort from circuit designers to produce efficient transistor model. The high accuracy of transistor model will enable the designer to predict the real output of the circuit before the design is fabricated into the actual chip. • These days, the models for CMOS transistor using silicon technology are well established. These CMOS transistor models are ready to most of Computer Aided Design (CAD) software such as CADENCE and Mentor Graphics. However, for advanced devices from other high frequency materials like InP pseudomorphic High Electron Mobility Transistor (pHEMT), the transistor models still an issue. Therefore, there are many effort carried out to publish the best method for higher accuracy of the pHEMT transistor models. • Consequently, this work presents the high accuracy linear and nonlinear models of InP pHEMT devices for circuit designs especially in high speed, high frequency, low noise applications such as Low Noise Amplifier (LNA).