Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/35522
Title: Structural, elastic, electronic and optical properties of the newly synthesized monoclinic Zintl phase BaIn₂P₂
Authors: Guechi, N.
Abdelmadjid, Bouhemadou
S., Bin-Omran
M., Chegaar
Yarub, Al-Douri, Assoc. Prof. Dr.
Rabah, Khenata, Prof. Dr.
A., Bourzami
abdelmadjidbouhemadou@gmail.com
Keywords: Zintl phase BaIn₂P₂
Ab initio calculations
Elastic moduli
Electronic properties
Optical constants
Issue Date: Mar-2014
Publisher: Elsevier
Citation: Solid State Sciences, vol.29, 2014, pages 12–23
Abstract: The present study explores the structural, elastic, electronic and optical properties of the newly synthesized monoclinic Zintl phase BaIn₂P₂ using a pseudopotential plane-wave method in the framework of density functional theory within the generalized gradient approximation. The calculated lattice constants and internal coordinates are in very good agreement with the experimental findings. Independent single-crystal elastic constants as well as numerical estimations of the bulk modulus, the shear modulus, Young's modulus, Poisson's ratio, Pugh's indicator of brittle/ductile behaviour and the Debye temperature for the corresponding polycrystalline phase were obtained. The elastic anisotropy of BaIn₂P₂ was investigated using three different indexes. The calculated electronic band structure and the total and site-projected l-decomposed densities of states reveal that this compound is a direct narrow-band-gap semiconductor. Under the influence of hydrostatic pressure, the direct D–D band gap transforms into an indirect B-D band gap at 4.08 GPa, then into a B–Γ band gap at 10.56 GPa. Optical macroscopic constants, namely, the dielectric function, refractive index, extinction coefficient, reflectivity coefficient, absorption coefficient and energy-loss function, for polarized incident radiation along the [100], [010] and [001] directions were investigated.
Description: Link to publisher's homepage at http://www.journals.elsevier.com
URI: http://dspace.unimap.edu.my:80/dspace/handle/123456789/35522
ISSN: 1293-2558
Appears in Collections:Yarub Al-Douri, Assoc. Prof. Dr.
Institute of Nano Electronic Engineering (INEE) (Articles)

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