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dc.contributor.authorMas Elyza, Mohd Azol-
dc.contributor.authorMahnaz, Shafiei, Dr.-
dc.contributor.authorLoew,  Pei Ling, Dr.-
dc.contributor.authorFoo, Kai Loong-
dc.contributor.authorUda, Hashim, Prof. Dr.-
dc.contributor.authorRashidah @ Siti Saedah, Arsat, Dr.-
dc.date.accessioned2014-05-23T07:41:32Z-
dc.date.available2014-05-23T07:41:32Z-
dc.date.issued2013-
dc.identifier.citationSensors and Transducers, vol. 149(2), 2013, pages 49-53en_US
dc.identifier.issn1726-5479-
dc.identifier.urihttp://www.sensorsportal.com/HTML/DIGEST/P_1126.htm-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/34682-
dc.descriptionLink to publisher's homepage at http://www.sensorsportal.com/en_US
dc.description.abstractThis paper presents an analysis of Schottky diode performance with the utilization of zinc oxide (ZnO) thin film as a gas sensor. The presented device is implemented with new type of electrode shape which is hexagon compared to conventional circular Schottky contact. The Schottky diode was integrated with thin film layer of ZnO by using sol-gel method. I-V characteristic of the device response to gas target was obtained and discussed in this paper. Results show larger voltage shift obtained at the reverse biased mode up to 1200 mV at room temperature. The results suggested future research can be done in enhancing the metal oxide thin film based device.en_US
dc.language.isoenen_US
dc.publisherInternational Frequency Sensor Association (IFSA)en_US
dc.subjectHexagon Schottky contacten_US
dc.subjectSchottky diodeen_US
dc.subjectThin filmen_US
dc.subjectZnOen_US
dc.titlePerformance of hexagon Au electrode on ZnO thin film schottky diode gas sensoren_US
dc.typeArticleen_US
dc.contributor.urlmahnaz.shafiei@qut.edu.auen_US
dc.contributor.urlleowpl@fke.utm.myen_US
dc.contributor.urlelitefoo@yahoo.comen_US
dc.contributor.urluda@unimap.edu.myen_US
dc.contributor.urlrashidah@fke.utm.myen_US
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)
Uda Hashim, Prof. Ts. Dr.

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