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dc.contributor.authorAli Hussain, Reshak, Prof. Dr.
dc.contributor.authorSaleem Ayaz, Khan
dc.date.accessioned2014-03-14T03:55:19Z
dc.date.available2014-03-14T03:55:19Z
dc.date.issued2014
dc.identifier.citationJournal of Alloys and Compounds, vol.595, 2014, pages 125–130en_US
dc.identifier.issn0925-8388
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/32746
dc.descriptionLink to publisher's homepage at http://www.elsevier.comen_US
dc.description.abstractAll electron full potential linear augmented plane wave method was used for calculating the nonlinear optical susceptibilities of CdGa₂X4₄(X = S, Se) within the framework of density functional theory. The exchange correlation potential was solved by recently developed modified Becke and Johnson (mBJ) approximation. The crystal structure of CdGa₂S₄ and CdGa₂Se₄ reveals a large uniaxial dielectric anisotropy ensuing the birefringence of −0.036 and −0.066 which make it suitable for second harmonic generation. The second order susceptibility View the MathML source|χijk(2)(ω)| and microscopic first hyperpolarizability βijk (ω ) were calculated. The calculated View the MathML source|χ123(2)(ω)| and View the MathML source|χ312(2)(ω)| static values for the dominant components found to be 18.36 pm/V and 22.23 pm/V for CdGa₂S₄ and CdGa₂Se₄. Both values shifted to be 60.12 pm/V and 108.86 pm/V at λ = 1064 nm. The calculated values of β123(ω) is 6.47 × 10−³º esu at static limit and 12.42 × 10−³º esu at λ = 1064 nm for CdGa₂S₄, whereas it is 8.82 × 10−³º esu at static limit and 20.51 × 10−³º esu at λ = 1064 nm for CdGa₂Se₄. The evaluation of second order susceptibilities and first hyperpolarizabilties suggest that CdGa₂X₄ possess huge second harmonic generation.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectDefect chalcopyritesen_US
dc.subjectBirefringenceen_US
dc.subjectNonlinear optical susceptibilitiesen_US
dc.titleDispersion of the second harmonic generation from CdGa₂X₄ (X = S, Se) defect chalcopyrite: DFT calculationsen_US
dc.typeArticleen_US
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0925838814000280
dc.identifier.urlhttp://dx.doi.org/10.1016/j.jallcom.2013.12.267
dc.contributor.urlsayaz_usb@yahoo.comen_US
Appears in Collections:Center of Excellence for Geopolymer and Green Technology (CEGEOGTECH) (Articles)
School of Materials Engineering (Articles)

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