1. UniMAP Library Digital Repository
  2. Journal Articles
  3. Institute of Nano Electronic Engineering (INEE) (Articles)
Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/32338
Full metadata record
DC FieldValueLanguage
dc.contributor.authorYarub, Al-Douri, Assoc. Prof. Dr.-
dc.date.accessioned2014-03-04T14:41:17Z-
dc.date.available2014-03-04T14:41:17Z-
dc.date.issued2013-
dc.identifier.citationProcedia Engineering, vol. 53, 2013, pages 400-404en_US
dc.identifier.isbn978-162748634-7-
dc.identifier.issn1877-7058-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S1877705813001719-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/32338-
dc.descriptionLink to publisher's homepage at www.elsevier.comen_US
dc.description.abstractElectrochemical deposition method is used to prepare GaN nanostructure. The morphological studies using scanning electron microscopy (SEM), photoluminescence (PL) the refractive index and optical dielectric constant are investigated experimentally and theoretically, respectively. These investigations are found to be dependent on the growth time. The nanosize effect is noticed for UV detectors applications. The calculated results are in agreement with experimental and theoretical data.en_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.subjectElectrochemicalen_US
dc.subjectGaN nanostructureen_US
dc.subjectPhotoluminescence (PL)en_US
dc.titleOptical properties of GaN nanostructures for optoelectronic applicationsen_US
dc.typeArticleen_US
dc.contributor.urlyarub@unimap.edu.myen_US
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)

Files in This Item:
File Description SizeFormat 
Optical properties of GaN nanostructures for optoelectronic applications.pdf5.87 kBAdobe PDFView/Open
Show simple item record


Items in UniMAP Library Digital Repository are protected by copyright, with all rights reserved, unless otherwise indicated.