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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/32336
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dc.contributor.authorNaser Mahmoud, Ahmed, Dr.-
dc.contributor.authorYarub, Al-Douri, Assoc. Prof. Dr.-
dc.contributor.authorAlwan, M. Alwan-
dc.contributor.authorGhassan Ezzulddin, Arif-
dc.contributor.authorAllaa A., Jabbar-
dc.date.accessioned2014-03-04T13:49:56Z-
dc.date.available2014-03-04T13:49:56Z-
dc.date.issued2013-
dc.identifier.citationProcedia Engineering, vol. 53, 2013, pages 393-399en_US
dc.identifier.isbn978-162748634-7-
dc.identifier.issn1877-7058-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S1877705813001707-
dc.identifier.urihttp://dspace.unimap.edu.my:80/dspace/handle/123456789/32336-
dc.descriptionLink to publisher's homepage at www.elsevier.comen_US
dc.description.abstractWe prepared nanostructures silicon photodiode (nPSi) by using laser assisted etching at fixed current density (30 mA/cm2) with different etching wavelengths of laser diode (532, 650 and 810 nm), a (metal/nanostructure silicon/metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes to improve the characterizations of PSi photodiode, A responsivity of (3A/w) was measured at (450 nm) with low value of dark current (1.33 μA/cm2) and higher value of photo current (610 μA/cm2) at 5 volt reverse bias. The results show that the wavelength IR (810 nm) give us the best photodiode and electrical characteristicsen_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.subjectNanostructures silicon photodiode (nPSi)en_US
dc.subjectLaser assisted etchingen_US
dc.titleCharacteristics of nanostructure silicon photodiode using laser assisted etchingen_US
dc.typeArticleen_US
dc.contributor.urlnaser@usm.myen_US
dc.contributor.urlyarub@unimap.edu.myen_US
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