Fabrication and characterization of porous silicon using long time low current electrochemical etching

Abstract

In this paper, the fabrication of porous silicon (PS) layers based on crystalline silicon (c-Si) wafers n-type of (100) orientation using electrochemical etching process was prepared. The effect of various etching time on structural and optical properties of PS has been investigated. Surface morphology of PS was characterized using scanning electron microscopy (SEM). Photoluminescence (PL) measurements of PS were performed at room temperature (RT). Additionally, the reflectance of PS was obtained using optical reflectometer (Filmetrics-F20). Etching time of 30, 60 and 120 min, with low current density 5mA/cm2 DC current has been compared. The results revealed at 120 minutes etching time exhibits high porosity and uniform distribution.