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dc.contributor.authorYarub, Al-Douri, Prof. Dr.-
dc.date.accessioned2013-07-23T07:36:46Z-
dc.date.available2013-07-23T07:36:46Z-
dc.date.issued2012-11-20-
dc.identifier.citationp. 169-172en_US
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/27000-
dc.descriptionMalaysian Technical Universities Conference on Engineering and Technology (MUCET) 2012 organised by technical universities under the Malaysian Technical Universities Network (MTUN), 20th - 21st November 2012 at Hotel Seri Malaysia, Kangar, Perlis.en_US
dc.description.abstractElectrochemical deposition method is used to prepare GaN nanostructure. The morphological studies using scanning electron microscopy (SEM), photoluminescence (PL) the refractive index and optical dielectric constant are investigated experimentally and theoretically, respectively. These investigations are found to be dependent on the growth time. The nanosize effect is noticed for UV detectors applications. The calculated results are in agreement with experimental and theoretical data.en_US
dc.language.isoenen_US
dc.publisherMalaysian Technical Universities Network (MTUN)en_US
dc.relation.ispartofseriesProceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCET) 2012en_US
dc.subjectElectrochemicalen_US
dc.subjectGaN nanostructureen_US
dc.subjectPhotoluminescence (PL)en_US
dc.titleOptical properties of GaN nanostructures for optoelectronic applicationsen_US
dc.typeWorking Paperen_US
dc.contributor.urlyarub@unimap.edu.myen_US
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