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dc.contributor.authorMohd Hafizuddin, Mat-
dc.contributor.authorMohd. Fareq, Abd. Malek, Dr.-
dc.contributor.authorSyed Idris, Syed Hassan, Prof. Dr.-
dc.contributor.authorMuhammad Solihin, Zulkifli-
dc.contributor.authorRonald, Suzanna Harun-
dc.date.accessioned2013-07-11T06:44:05Z-
dc.date.available2013-07-11T06:44:05Z-
dc.date.issued2012-03-27-
dc.identifier.citationp. 452-455en_US
dc.identifier.isbn978-193414220-2-
dc.identifier.issn1559-9450-
dc.identifier.urihttp://piers.org/piersproceedings/piers2012KualalumpurProc.php?start=50-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/26580-
dc.descriptionLink to publisher's homepage at http://emacademy.org/en_US
dc.description.abstractIn this paper, the Specific Absorption Rate (SAR) inside the head due to metallic straight pins and spectacles is investigated. The finite integration in time domain technique (FIT) computer simulation using CST Microwave Studio was used in this investigation. Two sets of dipole antennas operated at 900MHz and 1800MHz for GSM application were used in the simulation model represent as radiation sources from MCE. In parametric studies the optimum dipole location is selected for all simulations and only varying both of the pin length and its horizontal separation distance between the head. The results compared with the head worn metallic spectacle.en_US
dc.language.isoenen_US
dc.publisherThe Electromagnetics Academyen_US
dc.relation.ispartofseriesProceedings of Progress in Electromagnetics Research Symposium (PIERS) 2012en_US
dc.subjectCorrelation analysisen_US
dc.subjectSpecific Absorption Rate (SAR)en_US
dc.subjectMetallic spectaclesen_US
dc.subjectRadiation sourceen_US
dc.titleCorrelation analysis on the Specific Absorption Rate (SAR) between metallic spectacle and pins exposed from radiation sourcesen_US
dc.typeWorking Paperen_US
dc.contributor.urlhafizuddin@ieee.orgen_US
dc.contributor.urlmfareq@unimap.edu.myen_US
dc.contributor.urlsyedidris@unimap.edu.myen_US
dc.contributor.urlsolihin@ieee.orgen_US
dc.contributor.urlsuzanna.hr@ieee.orgen_US
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