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Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Humayun, M. A. | - |
dc.contributor.author | Md Abdur Rashid, Dr. | - |
dc.contributor.author | Mohd Fareq, Abd. Malek, Dr. | - |
dc.contributor.author | A. N. Hussain | - |
dc.date.accessioned | 2013-07-11T04:58:00Z | - |
dc.date.available | 2013-07-11T04:58:00Z | - |
dc.date.issued | 2012-07 | - |
dc.identifier.citation | Journal of Russian Laser Research, 2012, vol. 33(4), pages 387-394 | en_US |
dc.identifier.issn | 1071-2836 | - |
dc.identifier.uri | http://link.springer.com/article/10.1007%2Fs10946-012-9294-7 | - |
dc.identifier.uri | http://dspace.unimap.edu.my/123456789/26575 | - |
dc.description | Link to publisher's homepage at http://link.springer.com/ | en_US |
dc.description.abstract | We analyze the effect of the lattice constant on the band-gap energy of In x Ga1−x N and optimize the structure of the device with a separate-confinement heterostructure. To vary the lattice constants, we change the In molar fraction, which permits us to investigate a wide range of the band gap of the active material employed in diode lasers. In x Ga1−x N is a promising active material for high-performance 1.55 μm quantum-dot lasers due to its excellent band-gap-energy stability with respect to temperature variations. The band gap of In x Ga1−x N decreases from 3.4 to 0.7 eV, and the necessary band gap can be achieved by changing the lattice parameters depending on the device application. It has been found that In0.86Ga0.14N can be a promising material for emitting light at a wavelength of 1.55 μm. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer US | en_US |
dc.subject | Quantum dot | en_US |
dc.subject | Lattice constant | en_US |
dc.subject | Band gap | en_US |
dc.subject | InGaN | en_US |
dc.subject | Molar fraction | en_US |
dc.subject | Temperature stability | en_US |
dc.title | Effect of lattice constant on band-gap energy and optimization and stabilization of high-temperature In xGa 1 -xN quantum-dot lasers | en_US |
dc.type | Article | en_US |
dc.contributor.url | humayun0403063@gmail.com | en_US |
Appears in Collections: | School of Electrical Systems Engineering (Articles) Mohd Fareq Abd Malek, Associate Professor Dr. |
Files in This Item:
File | Description | Size | Format | |
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Effect of lattice constant on band.pdf | 49.21 kB | Adobe PDF | View/Open |
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