Current dependence growth of ZnO nanostructures by electrochemical deposition technique

Abstract

Zinc oxide (ZnO) nanostructure with a hexagonal structure is deposited on Si (100) substrates through electrochemical deposition (ECD) using a current density of 2, 3, and 4 mA/cm 2 for 1.5 h. The photoluminescence (PL) intensity of the films has large peaks around the ultraviolet and green emission. The green emission may correspond to the electron transition from the defects to the valence band. The intensity of these two emissions changes with respect to the current density. X-ray diffraction (XRD) measurements show that the peaks of these grown samples refer to the ZnO with a hexagonal structure and a preferable orientation of (101). Refractive index, optical dielectric constant, and bulk modulus are investigated in the ZnO nanostructure. The obtained results are in good agreement with the experimental and theoretical ones.