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dc.contributor.authorMohd Khairuddin, Md Arshad, Dr.-
dc.contributor.authorMostafa, Emam-
dc.contributor.authorKilchytska, Valeria I., Dr.-
dc.contributor.authorAndrieu, François, Dr.-
dc.contributor.authorFlandre, Denis, Prof.-
dc.contributor.authorRaskin, Jean-Pierre P., Prof.-
dc.date.accessioned2013-03-08T02:06:35Z-
dc.date.available2013-03-08T02:06:35Z-
dc.date.issued2012-01-
dc.identifier.citationp.105-108en_US
dc.identifier.isbn978-145771316-3-
dc.identifier.urihttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6160155&contentType=Conference+Publications-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/23994-
dc.descriptionLink to publisher's homepage at http://ieeexplore.ieee.org/en_US
dc.description.abstractRF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency f T and maximum oscillation frequency f max of 160 GHz and 143 GHz, respectively, are demonstrated. Based on an accurate extraction of the small-signal equivalent circuit of UTBB MOSFET over a wide frequency range, it is revealed that ground plane (GP) implementation (i.e. highly-doped region underneath the BOX)does not increase the high frequency parasitic capacitances, and thus does not degrade the RF performance of UTBB devices.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.ispartofseriesProceeding of the IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2012)en_US
dc.subjectCapacitanceen_US
dc.subjectEquivalent circuitsen_US
dc.subjectLogic gatesen_US
dc.subjectMOSFETsen_US
dc.subjectRadio frequencyen_US
dc.subjectSubstratesen_US
dc.subjectUltra-thin body with ultra-thin buried oxide (UTBB)en_US
dc.subjectParasitic capacitanceen_US
dc.titleRF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETsen_US
dc.typeWorking Paperen_US
dc.contributor.urlmohd.khairuddin@unimap.edu.myen_US
dc.contributor.urlmohd.mdarshad@uclouvain.been_US
dc.contributor.urljean-pierre.raskin@uclouvain.been_US
dc.contributor.urlpascal.scheiblin@cea.fren_US
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