Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/22918
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dc.contributor.authorMuhammad, Kashif-
dc.contributor.authorYarub, Al-Douri, Assoc. Prof. Dr.-
dc.contributor.authorUda, Hashim, Prof. Dr.-
dc.contributor.authorMd. Eaqub, Ali-
dc.contributor.authorSyed Muhammad Usman, Ali-
dc.contributor.authorWillander, Magnus, Prof-
dc.date.accessioned2013-01-10T06:12:54Z-
dc.date.available2013-01-10T06:12:54Z-
dc.date.issued2012-02-
dc.identifier.citationMicro and Nano Letters, vol.7 (2), 2012, pages 163-167en_US
dc.identifier.issn1750-0443-
dc.identifier.issnhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6156044-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/22918-
dc.descriptionLink to publisher's homepage at http://www.theiet.org/en_US
dc.description.abstractNanostructure ZnO was grown on thin aluminium layer, deposited on silicon substrate using the sol-gel method. The surface morphologies of nanostructure ZnO at different precursor concentrations were studied using scanning electron microscopy. Raman spectroscopy suggested that nanorods started to grow along with nanoflakes at a precursor concentration of 50mM and the density of the nanorods significantly increases when the concentration was raised to 75mM. Raman spectra were intensified and red shifted with the increment of precursor concentration. Optical properties of refractive index and optical dielectric constant are investigated. The structural defects at lower level of precursor were probably due to the hypoxic environment, whereas the red shift of Raman spectra was due to the structural change of ZnO nanocrystalsen_US
dc.language.isoenen_US
dc.publisherInstitution of Engineering and Technology (IET)en_US
dc.subjectRaman spectraen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectsurface morphologyen_US
dc.subjectRaman spectroscopyen_US
dc.subjectscanning electron microscopyen_US
dc.titleCharacterisation, analysis and optical properties of nanostructure ZnO using the sol-gel methoden_US
dc.typeArticleen_US
dc.contributor.urlkashif_bme@yahoo.comen_US
dc.contributor.urlyarub@unimap.edu.myen_US
dc.contributor.urluda@unimap.edu.myen_US
dc.contributor.urleaqubali@gmail.comen_US
dc.contributor.urlsyeal@itn.liu.seen_US
dc.contributor.urlmagwi@itn.liu.seen_US
Appears in Collections:Institute of Nano Electronic Engineering (INEE) (Articles)
Uda Hashim, Prof. Ts. Dr.



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