Improve the leakage current behavior of sol-gel synthesize barium strontium titanate thin film on (111) oriented Pt

Abstract

The leakage current mechanism of Al/Ba0.7Sr0.3TiO3/Pt(111) ferroelectric thin film capacitor is investigated under positive bias and at room temperature. The perovskite structure of the film has been confirmed by XRD. The results show that the leakage current is Ohmic at low applied electric field (< 2.8 ×104 V/cm), Schottky emission and Poole–Frenkel emission at high applied field (> 4.2×105 V/cm), and it is space charge limited conduction for intermediate and high applied electric field. The leakage current of the ferroelectric film used in this work has shown very low values. Furthermore, the breakdown strength of the present film is relatively high, this implies that the film used in this work has excellent dielectric properties, and it is suitable for microelectronic devices application.