Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI

Abstract

Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the semiconductor process simulation function and the device function by taking the description of the transistor layout input to simulate the fabrication process and device behavior before the actual silicon is made. This Final Year Project thesis illustrate the use of Synopsys’ Taurus TCAD (TSUPREM-4 and MEDICI) to develop and simulate the fabrication and electrical behavior of 0.13µm NMOS and PMOS transistor. Illustration also includes how process simulation by TSUPREM-4 to produce an output file containing complete structure, mesh and doping information that can be read into MEDICI device simulator to extract electrical characteristics. At the end of this project, the finding shows the threshold voltage and current-voltage curve (ID vs. VGS and ID vs. VDS). The result for electrical characteristics does not show saturation region. There due to the effect of channel length modulation. Beside that, the accuracy of the resistance method is dependent on the threshold voltage.