Study of the thickness of the Silicon Dioxide on wafer using Dry and Wet Oxidation method

Abstract

Studies of the interaction of O2 and O with Si(100) at a fundamental level are reviewed. Both atomic and molecular chemisorbed species have been found on these surfaces. STM studies have given a great deal of information on site geometry at very low coverages. Kinetic studies of O2 adsorption are characterized by a fast-adsorption regime below one monolayer (ML) with an initial sticking coefficient SO well below unity and much slower adsorption at higher coverages. Atomic oxygen is adsorbed with unit sticking coefficient at very low coverages. At coverages beyond 1 ML, S0 decreases much more slowly with coverage than for O2. Adsorption of O2 can be enhanced using simultaneous ion or electron bombardment. Thermal decomposition studies of ultrathin oxide films show that the film is not in diffusional equilibrium at the desorption temperature and that the decomposition is inhomogeneous with void formation exposing the Si substrate. As the results on the study of the thickness grow on wafer surface, the differences between temperature and time as the parameter are the factors for SiO2 to grow or diffuse on wafer surface. With the increase of temperature or time, the thickness is greater than lower temperature or time and for dry oxidation the growth rate is much slower than wet oxidation. The results also shows that there are different colors appear for different thickness grow on the surface.