Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/1991
Title: Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth
Authors: Nur Ruzana Bohari
Mohd Hafiz Ismail (Advisor)
Keywords: Diffusion
Semiconductors
Negative metal oxide semiconductors (NMOS)
Integrated circuits
Silicon
Issue Date: Apr-2008
Publisher: Universiti Malaysia Perlis
Abstract: This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and energy is dependence. The purposes are to calculate the diffusion coefficient with various value of temperature and energy (activation energy), yet to observe how of temperature and energy (implantation energy) correspondence to the junction depth by simulation. The calculation is done using MahCAD14 while TSUPREM4 software used to simulate the design. By these two (2) methods, the temperature and energy dependent in both diffusion coefficient and junction depth can be approved. There are the problems and limitations and how to overcome the difficulties. There are also recommendation and commercialization potential discussed in the final chapter of this thesis.
Description: Access is limited to UniMAP community.
URI: http://dspace.unimap.edu.my/123456789/1991
Appears in Collections:School of Microelectronic Engineering (FYP)

Files in This Item:
File Description SizeFormat 
Abstract, Acknowledgment.pdf26.08 kBAdobe PDFView/Open
Conclusion.pdf42.19 kBAdobe PDFView/Open
Introduction.pdf45.06 kBAdobe PDFView/Open
Literature review.pdf125.25 kBAdobe PDFView/Open
Methodology.pdf382.49 kBAdobe PDFView/Open
References and appendix.pdf1.39 MBAdobe PDFView/Open


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