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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/1991
Title: | Temperature and energy dependence of diffusion in Solid - Effect of Diffusion Coefficient and Junction Depth |
Authors: | Nur Ruzana Bohari Mohd Hafiz Ismail (Advisor) |
Keywords: | Diffusion Semiconductors Negative metal oxide semiconductors (NMOS) Integrated circuits Silicon |
Issue Date: | Apr-2008 |
Publisher: | Universiti Malaysia Perlis |
Abstract: | This project entitled Effect of Diffusion Coefficient and Junction Depth on Variation of Temperature and Energy is carry out to find the effect of the junction depth and the diffusion coefficient and how temperature and energy is dependence. The purposes are to calculate the diffusion coefficient with various value of temperature and energy (activation energy), yet to observe how of temperature and energy (implantation energy) correspondence to the junction depth by simulation. The calculation is done using MahCAD14 while TSUPREM4 software used to simulate the design. By these two (2) methods, the temperature and energy dependent in both diffusion coefficient and junction depth can be approved. There are the problems and limitations and how to overcome the difficulties. There are also recommendation and commercialization potential discussed in the final chapter of this thesis. |
Description: | Access is limited to UniMAP community. |
URI: | http://dspace.unimap.edu.my/123456789/1991 |
Appears in Collections: | School of Microelectronic Engineering (FYP) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Abstract, Acknowledgment.pdf | 26.08 kB | Adobe PDF | View/Open | |
Conclusion.pdf | 42.19 kB | Adobe PDF | View/Open | |
Introduction.pdf | 45.06 kB | Adobe PDF | View/Open | |
Literature review.pdf | 125.25 kB | Adobe PDF | View/Open | |
Methodology.pdf | 382.49 kB | Adobe PDF | View/Open | |
References and appendix.pdf | 1.39 MB | Adobe PDF | View/Open |
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