Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/1978
Title: Fabrication and characterization of Barium Strontium Titanate (BA1-XSRXTIO3 BST) for heat sensor application
Authors: Mohd Hafiz Shaari
Uda Hashim, P.M. Dr. (Advisor)
Keywords: Titanates
Detectors
Heat sensor
Ferroelectricity
Semiconductors
Ferroelectric devices
Barium titanate
Thin film sensor
Issue Date: Apr-2008
Publisher: Universiti Malaysia Perlis
Abstract: Ferroelectric Barium Strontium Titanate (BST) thin films were successfully prepared by wet chemical deposition or sol-gel method and characterized using SPA, AFM, and sensing properties. The BST thin film was fabricated on Si substrate to detect pressure and to study working mechanism of the BST.. The BST solution is dilute after adding with some solvent to make the Barium Titanate and Strontium Titanate more soluble. The annealed BST films showed a sharp perovskite structure with uniform microstructure Experimental results show that the I-V characteristic of the thin films increase rapidly with the BST solution is added with solvent material. Films that added with Ethylene Glycol and Acid acetic show different dielectric performance then films that use BST solution itself. Compared with the available data in the literature, the experiment results show improvement on the electrical properties and microstructure. Structural and electrical properties of BST thin film prepared by sol-gel method were investigated to verify influences of adding a solvent to the morphology and the electrical characteristic. Mixing the solution with solvent not only decrease grain growth but also improvement of crystallinity in BST films. The composition, crystal structure and microstructure of the thin films were characterized using AFM and SEMS. Experimental results show that this method is effective BST thin films for sensors application.
Description: Access is limited to UniMAP community.
URI: http://dspace.unimap.edu.my/123456789/1978
Appears in Collections:School of Microelectronic Engineering (FYP)

Files in This Item:
File Description SizeFormat 
Abstract, Acknowledgment.pdf34.77 kBAdobe PDFView/Open
Conclusion.pdf10.67 kBAdobe PDFView/Open
Introduction.pdf15.09 kBAdobe PDFView/Open
Literature review.pdf53.81 kBAdobe PDFView/Open
Methodology.pdf273.11 kBAdobe PDFView/Open
References and appendix.pdf32.26 kBAdobe PDFView/Open
Results and discussion.pdf1.92 MBAdobe PDFView/Open


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