Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/1959
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dc.contributor.authorSiti Zawana Abdul Rani-
dc.date.accessioned2008-09-05T04:03:19Z-
dc.date.available2008-09-05T04:03:19Z-
dc.date.issued2008-04-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/1959-
dc.description.abstractCurrent mirror or current source is a one of the key elements in analog circuit design. For high performance analog circuit applications, the accuracy and output impedance are the most important parameters to determine the performance of the current mirror. In this project, a new body-driven current mirror that utilizes an adaptive gate bias to provide accurate operation over a wide range of bias currents is presented. The proposed current mirror can operate with an input and output voltage compliance of VDSAT with no level shifting. By using cascode structure, the proposed circuit can increase the output impedance and also reducing the body effect error. In addition, the cascode configuration also will offer the output current which can prevent from channel length effect and obtain the output. Furthermore, the proposed circuit has much better output compare to other conventional current mirror circuit in the sense that it can achieve the input output mismatch. The design was carried out with properly defined simulation runs on Mentor Graphic environment using TSMC (Taiwan Semiconductor Manufacturing Company) 0.357m CMOS rules of technology and ELDO version 6.5_1.1 simulation with Bsim3v3 version 3.1 at 3.3V supply voltage.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectMetal oxide semiconductors, Complementaryen_US
dc.subjectLinear integrated circuitsen_US
dc.subjectLinear integrated circuits -- Design and constructionen_US
dc.subjectElectronic circuit designen_US
dc.subjectIntegrated circuitsen_US
dc.titleDesign a current mirror using body driven techniqueen_US
dc.typeLearning Objecten_US
dc.contributor.advisorNorhawati Ahmad (Advisor)en_US
dc.publisher.departmentSchool of Microelectronic Engineeringen_US
Appears in Collections:School of Microelectronic Engineering (FYP)

Files in This Item:
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Abstract, Acknowledgment.pdf143.94 kBAdobe PDFView/Open
Conclusion.pdf90.33 kBAdobe PDFView/Open
Introduction.pdf95.62 kBAdobe PDFView/Open
Literature review.pdf200.35 kBAdobe PDFView/Open
Methodology.pdf237.83 kBAdobe PDFView/Open
References and appendix.pdf196.54 kBAdobe PDFView/Open
Results and discussion.pdf235.31 kBAdobe PDFView/Open


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