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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation 99

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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation 9 1 0 6 0 6 3

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Methodology.pdf 3
Conclusion.pdf 2
Literature review.pdf 2
Results and discussion.pdf 2
Abstract, Acknowledgment.pdf 1
Introduction.pdf 1
References and appendix.pdf 1

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