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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation 156

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The study on the effects of varying Dopant concentration and Diffusion Time in the design of Silicon Avalanche Diode with minimum Vbr of 120v+20% by simulation 3 5 3 2 3 0 0

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Methodology.pdf 6
Conclusion.pdf 4
Literature review.pdf 3
References and appendix.pdf 3
Results and discussion.pdf 3
Abstract, Acknowledgment.pdf 2
Introduction.pdf 2

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