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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/19361
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dc.contributor.authorNoor Rehan, Zainal Abidin-
dc.contributor.authorCheong, Kuan Yew, Dr.-
dc.contributor.authorLockman, Zainovia-
dc.date.accessioned2012-05-28T14:05:48Z-
dc.date.available2012-05-28T14:05:48Z-
dc.date.issued2009-07-
dc.identifier.citationp. 8, 10, 12, 14en_US
dc.identifier.issn0126-9909-
dc.identifier.urihttp://www.myiem.org.my/content/iem_bulletin_2009-184.aspx-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/19361-
dc.descriptionLink to publisher’s homepage at http://www.myiem.org.my/en_US
dc.language.isoenen_US
dc.publisherThe Institution of Engineers, Malaysiaen_US
dc.relation.ispartofseriesJuruteraen_US
dc.relation.ispartofseries2009 (7)en_US
dc.subjectHigh temperature electronic (HTE)en_US
dc.subjectSemiconductoren_US
dc.subjectWide band gap (WBG)en_US
dc.subjectSilicon carbide (SiC)en_US
dc.titleMaterial selection for high temperature electronic devices and its potential applicationsen_US
dc.typeArticleen_US
Appears in Collections:Jurutera (Bulletin)

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