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dc.contributor.authorUda Hashim, Assoc. Prof. Dr.-
dc.date.accessioned2008-08-20T03:30:45Z-
dc.date.available2008-08-20T03:30:45Z-
dc.date.issued2005-04-
dc.identifier.citationp.12-13en_US
dc.identifier.issn1675-5162-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/1729-
dc.language.isoenen_US
dc.publisherKolej Universiti Kejuruteraan Utara Malaysiaen_US
dc.relation.ispartofseriesMy KUKUMen_US
dc.relation.ispartofseriesApril - June 2005en_US
dc.subjectSiliconen_US
dc.subjectMetal oxide semiconductorsen_US
dc.subjectMOS transistoren_US
dc.subjectMetal oxide semiconductors, Complementaryen_US
dc.subjectMy KUKUM -- Penerbitan Universitien_US
dc.subjectKolej Universiti Kejuruteraan Utara Malaysia -- Publicationsen_US
dc.subjectSilicon-on-insulatoren_US
dc.subjectSemiconductor -- Design and constructionen_US
dc.titleHigh speed and low power devices : bulk silicon versus SOIen_US
dc.typeArticleen_US
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Uda Hashim, Prof. Ts. Dr.

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