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dc.contributor.authorNurjuliana, Juhari-
dc.contributor.authorNorzahiyah, Nordin-
dc.contributor.authorNoraini, Othman-
dc.date.accessioned2011-12-09T02:32:49Z-
dc.date.available2011-12-09T02:32:49Z-
dc.date.issued2009-08-12-
dc.identifier.isbn978-967-5048-55-5-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/17107-
dc.descriptionOrganized by Institute of Electrical and Electronics Engineers (IEEE) in collaboration with Electron Device Society (EDS) and Universiti Kebangsaan Malaysia (UKM), 10th - 12th August 2009 at Renaissance Hotel, Kota Bahru, Kelantan, Malaysia,en_US
dc.description.abstractFerroelectric Barium Strontium Titanate (BST) and doped with Indium (BIST) thin films are deposited using spin coating technique with spinning speed at 4000 rpm for 30 seconds. The percentage of Indium is varied with 2% and 10%. The post deposition annealing of the films are carried out at different temperature namely 700°C, 850°C and 950°C for a period of one day. At annealing temperature of 850°C for BIST 2% and 10% indicates that the current gives highest value when the forward bias voltage is applied for IV characteristics. Combination with lowest dopant concentration made BIST 2% can be classified into light dependent device. CV measurement for BIST 10% gives the higher result of capacitance value.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.ispartofseriesProceedings of the IEEE Regional Symposium on Micro and Nano Electronics (IEEE-RSM09)en_US
dc.subjectBarium Strontium Titanate (BST) thin filmen_US
dc.subjectIndium (III) oxideen_US
dc.subjectBarium Indium Strontium Titanate (BIST) thin filmen_US
dc.titleElectrical studies of annealing effect in BST thin film with different doping concentration of indium (III) oxideen_US
dc.typeArticleen_US
dc.contributor.urlnurjuliana@unimap.edu.myen_US
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