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Title: | Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices |
Authors: | S., Makovejev V., Kilchytska Mohd Khairuddin, Md Arshad D., Flandre F., Andrieu O., Faynot S., Olsen J. P., Raskin |
Keywords: | Bulk silicon Ground planes Interface effect Output conductance Self-heating Substrate effects Thermal properties Ultra-thin Ultrathin body |
Issue Date: | 14-Mar-2011 |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Citation: | p. 130-133 |
Series/Report no.: | Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS 2011) |
Abstract: | Self-heating and substrate effects are discussed and qualitatively compared in the ultra-thin body ultra-thin BOX (UTB2) devices without a ground plane. Ultra-thin body is aggravating thermal properties of the devices due to the interface effects. Ultra-thin BOX (10 nm) improves heat dissipation from the channel to the bulk silicon substrate but also results in strongly pronounced substrate effects. It is observed that output conductance degradation in the UTB2 devices due to the substrate effects can be as strong as degradation due to the self-heating. |
Description: | Link to publisher's homepage at http://ieeexplore.ieee.org/ |
URI: | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5758009 http://dspace.unimap.edu.my/123456789/14887 |
ISBN: | 978-1-4577-0090-3 |
Appears in Collections: | Conference Papers |
Files in This Item:
File | Description | Size | Format | |
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Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices.pdf | 7.45 kB | Adobe PDF | View/Open |
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