Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices

Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/14887

Title:	Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices
Authors:	S., Makovejev V., Kilchytska Mohd Khairuddin, Md Arshad D., Flandre F., Andrieu O., Faynot S., Olsen J. P., Raskin
Keywords:	Bulk silicon Ground planes Interface effect Output conductance Self-heating Substrate effects Thermal properties Ultra-thin Ultrathin body
Issue Date:	14-Mar-2011
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
Citation:	p. 130-133
Series/Report no.:	Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS 2011)
Abstract:	Self-heating and substrate effects are discussed and qualitatively compared in the ultra-thin body ultra-thin BOX (UTB2) devices without a ground plane. Ultra-thin body is aggravating thermal properties of the devices due to the interface effects. Ultra-thin BOX (10 nm) improves heat dissipation from the channel to the bulk silicon substrate but also results in strongly pronounced substrate effects. It is observed that output conductance degradation in the UTB2 devices due to the substrate effects can be as strong as degradation due to the self-heating.
Description:	Link to publisher's homepage at http://ieeexplore.ieee.org/
URI:	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5758009 http://dspace.unimap.edu.my/123456789/14887
ISBN:	978-1-4577-0090-3
Appears in Collections:	Conference Papers

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