A Study on Surface Roughness and Morphology of Galliumoxide Doped Ba0.5Sr0.5TiO3 Thin Film

Abstract

Thin films of perovskite BaxSr1−xTiO3 system are promising candidates for microelectronic devices that can be integrated to semiconductor circuits. The leadfree solid solution BaxSr1−xTiO3 (BST) is a high permittivity dielectric material with low loss and is suitable for use in dynamic random access memory (DRAM) cells, tunable microwave devices and by-pass capacitors. In this project look for developing barium gallium strontium titanate (BGST) thin film using chemical solution deposition (CSD) method as new material in ferroelectric fabrication. Solution was prepared by combination BaSrTiO3 and gallium oxide with selected concentrations (0%, 1%, 2%, 5% and 10%) in 1 Mol precursor and anneals using high temperature (900 ºC, 950 ºC and 1000 ºC). An examination of the importance of heterogeneous reaction on thin film, it laid the foundation for understanding of chemical reactions at surfaces through foundations a detailed treatment of surface electronic and geometric surface. Structure in surface science present compare between p-tyepe and n-type provide adsorbate structure by determine the adsorbed molecules are bound with respect to substrate atoms. That referred atoms and molecules incident on surface during high temperature anneal. In analysis, temperature 950 ºC show the morphology and composition of layered structures balance between the kinetics and thermodynamics. This temperature also show exhibit of the interaction surface energy and the surface tension in solid state is larger than other temperature. With increasingly concentrate values of the elements BGST, the distinction between coincidence lattice and incoherent structure is lost. Then, X-RD analysis information shows energetic and bonding interaction on the dynamics of molecule-surface interactions much better.