Silicon carbide (SiC)-based sensors for harsh environment applications

Abstract

An overview of gas sensors fabricated on single-chip silicon carbide (SiC) used in harsh environments has been presented in this article. The definition of harsh environment and the potential applications of the sensors have been elaborated. The intrinsic material properties of this wide bandgap semiconductor, have also been highlighted. In addition to that the requirements of a sensor operating at this condition, sensing mechanisms, and types of sensor architectures have been briefly reviewed. Finally, challenges faced by the SiC-based sensors, in terms of fabrication and commercialisation, have been suggested.