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dc.contributor.authorNor Bashariah Muhamad Bakhtiar-
dc.date.accessioned2008-07-02T08:40:11Z-
dc.date.available2008-07-02T08:40:11Z-
dc.date.issued2007-04-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/1369-
dc.descriptionAccess is limited to UniMAP community.en_US
dc.description.abstractStudy in design Static Random Access Memory (SRAM) using Mentor Graphic and simulation process with Eldo simulator. The research made on the operation of six transistors, its advantage over Dynamic Random Access Memory (DRAM) and circuit’s architecture. The design and simulation process prepared for all the internal components in SRAM which finalized with the combination schematic. Comparison performed for every simulation based on the theoretical in digital logic and the waveform performance. This project have four procedure which were creating the schematic of the circuit, creating symbol of the schematic, creating testbench for electrical testing and analog simulation which produce the output in voltage form. Result produced in the final design which a combination of internal components not successful and same as the expected which can deliver read and write operation. The failure occurs may cause of the inappropriate connection in the combination circuits, the declaration of signal in testbench which not suitable for the high number of input and output signals. This situation must be cause of the unsatisfactory supporting circuits for ensuring the six transistors can perform the SRAM operation. Although the final design does not produce the desired output, four of the objectives accomplished successfully. Recommendation in this project for future was an improvement that can be made in the experimental design with the specified objectives.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectStatic random access memoryen_US
dc.subjectSemiconductor storage devicesen_US
dc.subjectTransistorsen_US
dc.subjectMentor Graphic softwareen_US
dc.subjectDynamic random access memory (DRAM)en_US
dc.subjectIntegrated circuits -- Design and constructionen_US
dc.subjectComputer engineering -- Simulation methodsen_US
dc.subjectMetal oxide semiconductorsen_US
dc.titleStudy in Design of 32 X 4Bit Static Random Access Memory (SRAM)en_US
dc.typeLearning Objecten_US
dc.contributor.advisorNoraini Othman (Advisor)en_US
dc.publisher.departmentSchool of Microelectronic Engineeringen_US
Appears in Collections:School of Microelectronic Engineering (FYP)

Files in This Item:
File Description SizeFormat 
Abstract, Acknowledgement.pdf22.93 kBAdobe PDFView/Open
Conclusion.pdf15.07 kBAdobe PDFView/Open
Introduction.pdf67.47 kBAdobe PDFView/Open
Literature review.pdf53.8 kBAdobe PDFView/Open
Methodology.pdf197.73 kBAdobe PDFView/Open
References and appendix.pdf10.16 kBAdobe PDFView/Open
Result and discussion.pdf321.92 kBAdobe PDFView/Open


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